Please use this identifier to cite or link to this item: http://tailieuso.udn.vn/handle/TTHL_125/8822
Title: Study on Material Properties of Si Thin Films Crystallized on Yttria-Stabilized Zirconia in Solid Phase by Pulsed Laser Annealing
Other Titles: パルスレーザアニールによりイットリア安定化ジルコニア上に固相結晶化したSi薄膜の膜質に関する研究
Nghiên cứu thuộc tính vật liệu của màng mỏng Silic kết tinh trên lớp YSZ ở pha sắn bằng cách nung laser xung
Authors: Mai, Thị Kieu Lien
???metadata.dc.contributor.advisor???: Susumu, Horita, Assoc. Prof.
Keywords: Poly-Si
Pulsed laser
YSZ
Crystallization-induction layer
Low temperature
Solid phase crystallization
TFT
Issue Date: 2015-09
Publisher: Japan Advanced Institute of Science and Technology
Description: Doctoral Dissertation. Major: Materials Science; 178 pages.
???metadata.dc.description.tableofcontents???: Chapter 1: Introduction; Chapter 2: Theory of Solid-Phase Crystallization (SPC) of an Amorphous Film; Chapter 3: Fabrication Procedures and Evaluation Methods; ...
URI: http://tailieuso.udn.vn/handle/TTHL_125/8822
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