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http://tailieuso.udn.vn/handle/TTHL_125/8275| Title: | AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistors Using BN and AlTiO High-k Gate Insulators |
| Other Titles: | Các transistor hiệu ứng trường tiếp xúc dị thể kim loại - cách điện - bàn dẫn AlGaN/GaN sử dụng các chất cách điện có hằng số điện môi cao BN và AlTiO |
| Authors: | Nguyen, Quy Tuan |
| ???metadata.dc.contributor.advisor???: | Suzuki, Toshi-kazu, Prof. |
| Keywords: | AlGaN/GaN MIS-HFET BN AlTiO Channel conduction Gate leakage |
| Issue Date: | 2014-09 |
| Publisher: | Japan Advanced Institute of Science and Technology |
| Description: | Doctoral Dissertation. Major: Materials Science; 96 pages |
| ???metadata.dc.description.tableofcontents???: | Introduction; Fabrication process methods for AlGaN/GaN MIS-HFETs; BN thin films and BN/AlGan/GaN MIS-HFETs; ... |
| URI: | http://tailieuso.udn.vn/handle/TTHL_125/8275 |
| Appears in Collections: | Sư phạm |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| NguyenQuyTuan.TT.pdf | Abstract & Table of Contents | 105.21 kB | Adobe PDF | View/Open |
| NguyenQuyTuan.TV.pdf | Fulltext | 4.91 MB | Adobe PDF | View/Open Request a copy |
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