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Title: AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistors Using BN and AlTiO High-k Gate Insulators
Other Titles: Các transistor hiệu ứng trường tiếp xúc dị thể kim loại - cách điện - bàn dẫn AlGaN/GaN sử dụng các chất cách điện có hằng số điện môi cao BN và AlTiO
Authors: Nguyen, Quy Tuan
Advisor: Suzuki, Toshi-kazu, Prof.
Keywords: AlGaN/GaN
Channel conduction
Gate leakage
Issue Date: 2014-09
Publisher: Japan Advanced Institute of Science and Technology
Description: Doctoral Dissertation. Major: Materials Science; 96 pages
Table of contents: Introduction; Fabrication process methods for AlGaN/GaN MIS-HFETs; BN thin films and BN/AlGan/GaN MIS-HFETs; ...
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