AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistors Using BN and AlTiO High-k Gate Insulators

Please use this identifier to cite or link to this item: http://tailieuso.udn.vn/handle/TTHL_125/8275

Full metadata record

DC Field	Value	Language
dc.contributor.advisor	Suzuki, Toshi-kazu, Prof.	-
dc.contributor.author	Nguyen, Quy Tuan	-
dc.date.accessioned	2018-05-17T03:05:11Z	-
dc.date.available	2018-05-17T03:05:11Z	-
dc.date.issued	2014-09	-
dc.date.submitted	2014-10-10	-
dc.identifier.uri	http://tailieuso.udn.vn/handle/TTHL_125/8275	-
dc.description	Doctoral Dissertation. Major: Materials Science; 96 pages	-
dc.description.tableofcontents	Introduction; Fabrication process methods for AlGaN/GaN MIS-HFETs; BN thin films and BN/AlGan/GaN MIS-HFETs; ...	en
dc.language.iso	en	en
dc.publisher	Japan Advanced Institute of Science and Technology	en
dc.source	University of Science and Technology - The University of Danang	en
dc.subject	AlGaN/GaN	en
dc.subject	MIS-HFET	en
dc.subject	BN	en
dc.subject	AlTiO	en
dc.subject	Channel conduction	en
dc.subject	Gate leakage	en
dc.title	AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistors Using BN and AlTiO High-k Gate Insulators	en
dc.title.alternative	Các transistor hiệu ứng trường tiếp xúc dị thể kim loại - cách điện - bàn dẫn AlGaN/GaN sử dụng các chất cách điện có hằng số điện môi cao BN và AlTiO	en
dc.type	Ph.D Thesis	en
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